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PF0231A
MOS FET Power Amplifier Module for ADC Handy Phone
ADE-208-378A (Z) 2nd. Edition July 1996
Application
For ADC class3 824 to 849 MHz
Features
* Low voltage operation 4.8 V * High efficiency: 42% Typ for CW 34% Typ for /4-DQPSK * Simple Pout control: Controllable by VAPC * Low power control current: 600 A Typ.
Pin Arrangement
* RF-E 4 1: Pin 2: VAPC 3: VDD 4: Pout 5: GND
5 5 1
3 25
PF0231A
Internal Diagram and External Circuit
G
G
G
G : GND
PIN1 Pin
PIN2 VAPC C4 C2 FB1
PIN3 VDD C1 FB2
+ C3
PIN4 Pout
Z1
Z2
Pin
VAPC
VDD
Pout
C1 = C4 = 0.01 F (Ceramic chip) C2 = 4.7 F (Tantalum) C3 = 220 F (Aluminum electrolyte) FB = Ferrite bead BL01RN1-A62-001 (Manufacturer: MURATA) or equivalent Z1 = Z2 = 50 (Micro strip line)
Absolute Maximum Ratings (Tc = 25C)
Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Symbol VDD IDD VAPC Pin Tc (op) Tstg Rating 10 1.5 4.5 20 Unit V A V mW C C
-30 to +100 -30 to +100
PF0231A
Electrical Characteristics (Tc = 25C)
Item Frequency range Drain cutoff current Total efficiency(1) 2nd harmonic distortion 3rd harmonic distortion Input VSWR Output power Isolation Total efficiency(2) Adjacent channel leakage power Load VSWR tolerance Symbol f IDS T (1) 2nd H.D. 3rd H.D. Min 824 Typ Max 849 100 Unit MHz A % dBc dBc Test Condition
-- --
42
--
VDD = 10 V, VAPC = 0 V Pin = 1 mW, VDD = 4.8 V, Pout = 1.2 W (at VAPC controlled), RL = Rg = 50
--
37
-- -30 -30
3
-- --
-35 -40
1.5 2.1
VSWR (in) -- Pout 1.6
--
W dBm % dBc dBc Pin = 1 mW, VDD = 4.8 V, VAPC = 4.0 V, RL = Rg = 50 Pin = 1 mW, VDD = 4.8 V, VAPC = 0.5 V, RL = Rg = 50 Pin = controlled (p/4-DQPSK, = 0.35, 48.6kbps), BW = 24.3 kHz with R-NYQT, Pout = 1.0 W ave., VDD = 4.8 V, VAPC = 2.5 V Pin = 1 mW, VDD = 6 V, Pout 1.4 W, t = 10 sec., Output VSWR = 20:1 All phases Pin = 1 mW, VDD = 4 to 6 V, Pout 1.4 W, Output VSWR = 3:1 All phases, Rg = 50
-- -35 -- -27 -47
--
T (2) PADJ (30k) PADJ (60k)
--
30
-40
34
-- --
-30 -55
--
No degradation
--
Stability
--
No parasitic oscillation
--
PF0231A
Characteristics Curve
Pout, T vs. VAPC (1) 6 f = 824 MHz Pin = 0 dBm VDD = 4.8 V T 50 60
5 Output Power Pout (W)
3
30
2 Pout 1
20
10
0 0 1 2 Apc Voltage VAPC (V) 3 4
0
Pout, T vs. VAPC (2) 6 f = 849 MHz Pin = 0 dBm VDD = 4.8 V T 60
5 Output Power Pout (W)
50
3
30
2 Pout 1
20
10
0 0 1 2 Apc Voltage VAPC (V) 3 4
0
Efficiency T (%)
4
40
Efficiency T (%)
4
40
PF0231A
IDD, T vs. Pout 1000 VDD = 4.8 V VAPC = 2.5 V 824 MHz 849 MHz T IDD (mA) 600 30 50
800
40 Efficiency T (%)
400
IDD
20
200
10
0 18
22
26
0 30 31
Output Power Pout (dBm)
PADJ, Pin ave. vs. Pout VDD = 4.8 V VAPC = 2.5 V -10 824 MHz 849 MHz -20 PADJ 30k -30 -40 -50 -60
1.1W 1.2W
0
Pin ave.
PADJ (dBc), Pin ave. (dBm)
PADJ 60k
-70 18
22
26
30 31
Output Power Pout (dBm)
PF0231A
T vs. Pin 50
40 Efficiency T (%)
30
20 VDD = 4.8 V Pout = 1.2 W VAPC = Control 824 MHz 849 MHz 0 +3 +6
10
0 -3
Input Power Pin (dBm)
Pout vs. Pin 4
Output Power Pout (W)
3
2
1
VDD = 4.8 V VAPC = 4 V 824 MHz 849 MHz 0 +3 +6
0 -3
Input Power Pin (dBm)
PF0231A
PADJ, Pin ave, T vs. VDD Pout = 1.0 W VAPC = 2.5 V Pin = Control 824 MHz 849 MHz 60
50
T Adjacent Channel Leakage Power PADJ (dBc), Pin ave. (dBm)
40
30
+10
20
0 Pin ave. -10
-20 PADJ 30k -30
-40
-50
PADJ 60k
-60 4.0
4.3
4.5
4.8 5.4 Supply Voltage VDD (V)
6.0
Total Efficiency T (%)
PF0231A
PADJ, Pin ave, T vs. VAPC Pout = 1.0 W VDD = 4.8 V 824 MHz 849 MHz 50 Total Efficiency T (%)
T
40
30 Adjacent Channel Leakage Power PADJ (dBc), Pin ave. (dBm)
+10
20
0 Pin ave. -10
-20 PADJ 30k -30
-40
-50
PADJ 60k
-60
-70 2.0
2.5 Apc Voltage VAPC (V)
3.0
PF0231A
Package Dimensions
Unit: mm
25 0.5 (1.5) 22 0.5 (1.5)
(5 - 3.0)
5 1 2 3 (0.3) (5.1) (7.6) (5.1) 4
5
(1.5)
(5.8) (8.8) 3.7 0.5
5
5
2.35 0.5
12 0.5 (0.25)
(1.8)
(2.4)
0.5
(0.3)
+0.3 -0.2
Hitachi code EIAJ code JEDEC code
RF-E -- --

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